Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs
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: 2014شناسه الکترونیک: 10.1109/TED.2014.2348592
کلیدواژه(گان): amorphous semiconductors,gallium compounds,indium compounds,localised states,thin film transistors,wide band gap semiconductors,zinc compounds,InGaZnO,amorphous semiconductor TFTs,dark photonic excitation condition,energy distribution,fully current-based sub-bandgap optoelectronic differential ideality factor technique,gate bias-dependent differential change,intrinsic density-of-state extraction,localized states,sub-bandgap photonic excitation condition,subgap DOS extraction,thi
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آمار بازدید
Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs
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| contributor author | Hagyoul Bae | |
| contributor author | Hyojoon Seo | |
| contributor author | Sungwoo Jun | |
| contributor author | Hyunjun Choi | |
| contributor author | Jaeyeop Ahn | |
| contributor author | Junseok Hwang | |
| contributor author | Jungmin Lee | |
| contributor author | Oh, Sung-Min | |
| contributor author | Jong-Uk Bae | |
| contributor author | Sung-Jin Choi | |
| contributor author | Dae Hwan Kim | |
| contributor author | Dong Myong Kim | |
| date accessioned | 2020-03-13T00:20:59Z | |
| date available | 2020-03-13T00:20:59Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6891249.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1143423?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8326040 | |
| subject keywords | amorphous semiconductors | |
| subject keywords | gallium compounds | |
| subject keywords | indium compounds | |
| subject keywords | localised states | |
| subject keywords | thin film transistors | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | zinc compounds | |
| subject keywords | InGaZnO | |
| subject keywords | amorphous semiconductor TFTs | |
| subject keywords | dark photonic excitation condition | |
| subject keywords | energy distribution | |
| subject keywords | fully current-based sub-bandgap optoelectronic differential ideality factor technique | |
| subject keywords | gate bias-dependent differential change | |
| subject keywords | intrinsic density-of-state extraction | |
| subject keywords | localized states | |
| subject keywords | sub-bandgap photonic excitation condition | |
| subject keywords | subgap DOS extraction | |
| subject keywords | thi | |
| identifier doi | 10.1109/TED.2014.2348592 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 10 | |
| filesize | 1078008 | |
| citations | 0 |