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Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations

contributor authorCé
contributor authordola, Ariel
contributor authorGioannini, Mariangela
contributor authorCappelluti, F.
contributor authorCappelletti, Marcelo
contributor authorPeltzer y Blanca, Eitel
date accessioned2020-03-13T00:17:23Z
date available2020-03-13T00:17:23Z
date issued2014
identifier issn1548-0992
identifier other6872907.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1141239?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleStudy of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations
typeJournal Paper
contenttypeMetadata Only
identifier padid8323669
subject keywordsIII-V semiconductors
subject keywordsgallium arsenide
subject keywordsindium compounds
subject keywordsnumerical analysis
subject keywordssemiconductor doping
subject keywordssemiconductor quantum dots
subject keywordssolar cells
subject keywordsGaAs
subject keywordsInAs
subject keywordsbackground doping
subject keywordscell intrinsic region
subject keywordsdevice power conversion efficiency
subject keywordsdonor doping density
subject keywordsdoping level
subject keywordsfabrication process
subject keywordsnumerical simulation
subject keywordsphotocurrent enhancement dependence
subject keywordsquantum dot contribution
subject keywordsquantum dot solar cells
subject keywordsGallium arsenide
subject keywordsPhotoconductivity
subject keywordsPhotonic band gap
subject keywordsPhotovoltaic cells
subject keywordsQuantum dots
subject keywordsRadiative re
identifier doi10.1109/TLA.2014.6872907
journal titleLatin America Transactions, IEEE (Revista IEEE America Latina)
journal volume12
journal issue5
filesize919409
citations0


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