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High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

contributor authorModic, Aaron
contributor authorGang Liu
contributor authorAhyi, Ayayi C.
contributor authorYuming Zhou
contributor authorPingye Xu
contributor authorHamilton, Michael C.
contributor authorWilliams, John R.
contributor authorFeldman, L.C.
contributor authorDhar, Sudipta
date accessioned2020-03-13T00:15:52Z
date available2020-03-13T00:15:52Z
date issued2014
identifier issn0741-3106
identifier other6867347.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1140324?show=full
formatgeneral
languageEnglish
publisherIEEE
titleHigh Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping
typeJournal Paper
contenttypeMetadata Only
identifier padid8322655
subject keywordsMOSFET
subject keywordsannealing
subject keywordsantimony
subject keywordscarrier mobility
subject keywordsinterface states
subject keywordssemiconductor doping
subject keywordssilicon compounds
subject keywordswide band gap semiconductors
subject keywordsSb
subject keywordsSiC
subject keywordschannel mobility
subject keywordscounter doping
subject keywordsenhancement mode 4H-SiC MOSFET
subject keywordsinterface trap density
subject keywordspostoxidation annealing
subject keywordssurface channel
subject keywordstransverse surface electric field
subject keywordsAnnealing
subject keywordsDoping
subject keywordsLogic gates
subject keywordsMOSFET
subject keywordsPassivation
subject keywordsSilicon carbide
subject keywords4H-SiC MOSFET
subject keywordsantimony
subject keywordscounter-doping
subject keywordsmobility
subject keywordsounter-doping.
identifier doi10.1109/LED.2014.2336592
journal titleElectron Device Letters, IEEE
journal volume35
journal issue9
filesize492468
citations0


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