Built-in Effective Body-Bias Effect in Ultra-Thin-Body Hetero-Channel III—V-on-Insulator n-MOSFETs
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سال
: 2014شناسه الکترونیک: 10.1109/LED.2014.2328628
کلیدواژه(گان): MOSFET,conduction bands,permittivity,semiconductor-insulator boundaries,conduction band,drain induced barrier lowering,effective body-bias effect,electron affinity,electrostatic integrity,ultra-thin-body hetero-channel n-MOSFET,Electrostatics,Logic gates,MOSFET,MOSFET circuits,Permittivity,Silicon,Threshold voltage,III-V,Ultra-thin-body (UTB),drain-induced-barrier-lowering (DIBL),electrostatic integrity (EI),electrostatic integrity (EI).,hetero-channel
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آمار بازدید
Built-in Effective Body-Bias Effect in Ultra-Thin-Body Hetero-Channel III—V-on-Insulator n-MOSFETs
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| contributor author | Chang-Hung Yu | |
| contributor author | Pin Su | |
| date accessioned | 2020-03-13T00:10:15Z | |
| date available | 2020-03-13T00:10:15Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6840963.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1136936 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Built-in Effective Body-Bias Effect in Ultra-Thin-Body Hetero-Channel III—V-on-Insulator n-MOSFETs | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8318725 | |
| subject keywords | MOSFET | |
| subject keywords | conduction bands | |
| subject keywords | permittivity | |
| subject keywords | semiconductor-insulator boundaries | |
| subject keywords | conduction band | |
| subject keywords | drain induced barrier lowering | |
| subject keywords | effective body-bias effect | |
| subject keywords | electron affinity | |
| subject keywords | electrostatic integrity | |
| subject keywords | ultra-thin-body hetero-channel n-MOSFET | |
| subject keywords | Electrostatics | |
| subject keywords | Logic gates | |
| subject keywords | MOSFET | |
| subject keywords | MOSFET circuits | |
| subject keywords | Permittivity | |
| subject keywords | Silicon | |
| subject keywords | Threshold voltage | |
| subject keywords | III-V | |
| subject keywords | Ultra-thin-body (UTB) | |
| subject keywords | drain-induced-barrier-lowering (DIBL) | |
| subject keywords | electrostatic integrity (EI) | |
| subject keywords | electrostatic integrity (EI). | |
| subject keywords | hetero-channel | |
| identifier doi | 10.1109/LED.2014.2328628 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 8 | |
| filesize | 771245 | |
| citations | 0 |