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The Limited Relevance of SWE Dangling Bonds to Degradation in High-Quality a-Si:H Solar Cells

contributor authorWronski, Christopher R.
contributor authorXinwei Niu
date accessioned2020-03-12T23:56:24Z
date available2020-03-12T23:56:24Z
date issued2014
identifier issn2156-3381
identifier other6783732.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1128751?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleThe Limited Relevance of SWE Dangling Bonds to Degradation in High-Quality a-Si:H Solar Cells
typeJournal Paper
contenttypeMetadata Only
identifier padid8308975
subject keywordsHall effect
subject keywordsamorphous semiconductors
subject keywordscarrier lifetime
subject keywordsdangling bonds
subject keywordsdefect states
subject keywordselectron-hole recombination
subject keywordselemental semiconductors
subject keywordsenergy gap
subject keywordshydrogen
subject keywordsnanofabrication
subject keywordsnanostructured materials
subject keywordspassivation
subject keywordsphotoconductivity
subject keywordsplasma CVD
subject keywordssemiconductor growth
subject keywordssemiconductor thin films
subject keywordssilicon
subject keywordssolar cells
subject keywordsvacancies (crystal)
subject keywords1-sun fill factor
subject keywords1-sun illumination
subject keywordsSWE dangling bonds
subject keywordsShockley-Reed-Hall carrier recombination currents
subject keywordsSi:H
subject keywordsapparent correlation
subject keywordselectron lifetimes
identifier doi10.1109/JPHOTOV.2014.2311498
journal titlePhotovoltaics, IEEE Journal of
journal volume4
journal issue3
filesize477339
citations0


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