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Single-chip InGanN green light-emitting diodes with 3W optical output power

contributor authorWei Wang
contributor authorYong Cai
contributor authorJuan Hong Huang
contributor authorWei Huang
contributor authorHaiou Li
contributor authorXin Lin
contributor authorXiming Zhou
contributor authorBaosun Zhang
date accessioned2020-03-12T23:53:57Z
date available2020-03-12T23:53:57Z
date issued2014
identifier issn0013-5194
identifier other6777236.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1127307?show=full
formatgeneral
languageEnglish
publisherIET
titleSingle-chip InGanN green light-emitting diodes with 3W optical output power
typeJournal Paper
contenttypeMetadata Only
identifier padid8307247
subject keywordsIII-V semiconductors
subject keywordsindium compounds
subject keywordslight emitting diodes
subject keywordswide band gap semiconductors
subject keywordsInGaN
subject keywordsLED
subject keywordschip dimensions
subject keywordscommercial wafers
subject keywordscurrent 500 mA
subject keywordsdirect operation conditions
subject keywordselectrical characteristics
subject keywordsexternal quantum efficiency
subject keywordsforward voltage
subject keywordshigh-power single-chip green light-emitting diode
subject keywordsinjection current
subject keywordsoptical characteristics
subject keywordsoptical output power
subject keywordspower 3 W
subject keywordspower 41.5 W
subject keywordssingle-chip InGaN green light-emitting diodes
subject keywordsvoltage 83 V
identifier doi10.1049/el.2013.2980
journal titleElectronics Letters
journal volume50
journal issue6
filesize405011
citations0


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