•  English
    • Persian
    • English
  •   Login
  • Ferdowsi University of Mashhad
  • |
  • Information Center and Central Library
    • Persian
    • English
  • Home
  • Source Types
    • Journal Paper
    • Ebook
    • Conference Paper
    • Standard
    • Protocol
    • Thesis
  • Use Help
View Item 
  •   FUM Digital Library
  • Fum
  • Articles
  • Latin Articles
  • View Item
  •   FUM Digital Library
  • Fum
  • Articles
  • Latin Articles
  • View Item
  • All Fields
  • Title
  • Author
  • Year
  • Publisher
  • Subject
  • Publication Title
  • ISSN
  • DOI
  • ISBN
Advanced Search
JavaScript is disabled for your browser. Some features of this site may not work without it.

SPICE model of thyristors with amplifying gate and emitter-shorts

Author:
Zekry, Abdelhalim /A/.
,
Sayah, Gihan Taha
,
Soliman, Fouad /A/.
Publisher:
IET
Year
: 2014
DOI: 10.1049/iet-pel.2013.0158
URI: https://libsearch.um.ac.ir:443/fum/handle/fum/1125509
Keyword(s): SPICE,power semiconductor devices,semiconductor device models,semiconductor doping,thyristors,Gummel-Poon circuit model,SPICE model,amplifying gate,conductivity modulation,emitter-shorts,injection effects,low n-doped region,model parameter extraction,power thyristors,two-dimensional two-transistor circuit model
Collections :
  • Latin Articles
  • Show Full MetaData Hide Full MetaData
  • Statistics

    SPICE model of thyristors with amplifying gate and emitter-shorts

Show full item record

contributor authorZekry, Abdelhalim /A/.
contributor authorSayah, Gihan Taha
contributor authorSoliman, Fouad /A/.
date accessioned2020-03-12T23:50:55Z
date available2020-03-12T23:50:55Z
date issued2014
identifier issn1755-4535
identifier other6759619.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1125509
formatgeneral
languageEnglish
publisherIET
titleSPICE model of thyristors with amplifying gate and emitter-shorts
typeJournal Paper
contenttypeMetadata Only
identifier padid8305169
subject keywordsSPICE
subject keywordspower semiconductor devices
subject keywordssemiconductor device models
subject keywordssemiconductor doping
subject keywordsthyristors
subject keywordsGummel-Poon circuit model
subject keywordsSPICE model
subject keywordsamplifying gate
subject keywordsconductivity modulation
subject keywordsemitter-shorts
subject keywordsinjection effects
subject keywordslow n-doped region
subject keywordsmodel parameter extraction
subject keywordspower thyristors
subject keywordstwo-dimensional two-transistor circuit model
identifier doi10.1049/iet-pel.2013.0158
journal titlePower Electronics, IET
journal volume7
journal issue3
filesize1130433
citations0
  • About Us
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
DSpace software copyright © 2019-2022  DuraSpace