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High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure

contributor authorXiuling Li
contributor authorDi Geng
contributor authorMativenga, Mallory
contributor authorJin Jang
date accessioned2020-03-12T23:48:30Z
date available2020-03-12T23:48:30Z
date issued2014
identifier issn0741-3106
identifier other6747997.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1124069?show=full
formatgeneral
languageEnglish
publisherIEEE
titleHigh-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure
typeJournal Paper
contenttypeMetadata Only
identifier padid8303585
subject keywordsetching
subject keywordsgallium compounds
subject keywordsindium compounds
subject keywordsoscillators
subject keywordsthin film transistors
subject keywords11-stage ring oscillator
subject keywordsDG amorphous-indium-gallium-zinc-oxide thin-film transistor
subject keywordsDG-driven
subject keywordsInGaZnO
subject keywordsSG-driven
subject keywordsback-channel-etching
subject keywordsbulk-accumulation
subject keywordsfrequency 334 kHz
subject keywordsfrequency 781 kHz
subject keywordshigh-speed dual-gate TFT-based circuit
subject keywordssingle-gate-driven
subject keywordstop-gate offset structure
subject keywordsCapacitance
subject keywordsInverters
subject keywordsLogic gates
subject keywordsSwitching circuits
subject keywordsThin film transistors
subject keywordsa-IGZO TFTs
subject keywordsdual gate
subject keywordsinverter
subject keywordsring oscillator
identifier doi10.1109/LED.2014.2305665
journal titleElectron Device Letters, IEEE
journal volume35
journal issue4
filesize635491
citations0


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