Technical program

ناشر:
سال
: 2014
شناسه الکترونیک: 10.1109/ESSDERC.2014.6948829
کلیدواژه(گان): III-V semiconductors,gallium compounds,high electron mobility transistors,optimisation,semiconductor device packaging,virtual prototyping,wide band gap semiconductors,GaN,GaN technology,GaN virtual prototyping,cascoded GaN devices,device properties,high voltage applications,isolated GaN transistors,packaging,system-level cascode optimization,system-level optimization,traps modeling,Capacitance,Gallium nitride,HEMTs,MODFETs,MOSFET,Optimization,Performance evaluation,GaN
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