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Transient to temporarily permanent and permanent hole trapping transformation in the small area SiON P-MOSFET subjected to negative-bias temperature stress

contributor authorTung, Z.Y. , Ang, D.S.
date accessioned2020-03-12T23:32:45Z
date available2020-03-12T23:32:45Z
date issued2014
identifier other6898197.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1115515?show=full
formatgeneral
languageEnglish
publisherIEEE
titleTransient to temporarily permanent and permanent hole trapping transformation in the small area SiON P-MOSFET subjected to negative-bias temperature stress
typeConference Paper
contenttypeMetadata Only
identifier padid8284974
subject keywordsfailure analysis
subject keywordsfinancial management
subject keywordsphotovoltaic power systems
subject keywordspower generation economics
subject keywordspower generation reliability
subject keywordsrisk management
subject keywordsPV modules
subject keywordsPV power plant
subject keywordsdegradation loss
subject keywordsdurability loss
subject keywordsfield failure metrics
subject keywordsfinancial risk calculation
subject keywordshot-dry desert climate
subject keywordspower plant evaluations
subject keywordsreliability failures
subject keywordssafety failures
subject keywordstime 12 year
subject keywordsAbstracts
subject keywordsDegradation
subject keywordsGold
subject keywordsMeteorology
subject keywordsReliability
subject keywordsVariable speed drives
subject keywordsWarranties
subject keywordsO&
subject keywordsamp
subject keywordsM
subject keywordsdegradation rate
subject keywordsdurability
subject keywordshot dry
identifier doi10.1109/PVSC.2014.6925656
journal titlehysical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium o
filesize208437
citations0


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