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Systematic study of RTN in nanowire transistor and enhanced RTN by hot carrier injection and negative bias temperature instability

Author:
Ota, K. , Saitoh, M. , Tanaka, C. , Matsushita, D. , Numata, T.
Publisher:
IEEE
Year
: 2014
DOI: 10.1109/APCAP.2014.6992481
URI: https://libsearch.um.ac.ir:443/fum/handle/fum/1112960
Keyword(s): Antenna radiation patterns,Metals,Numerical models,Patch antennas,Stress,Thermal stresses,Co-simulation Methodology,Multi-physical Effects,Patch Antenna
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    Systematic study of RTN in nanowire transistor and enhanced RTN by hot carrier injection and negative bias temperature instability

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date accessioned2020-03-12T23:28:26Z
date available2020-03-12T23:28:26Z
date issued2014
identifier other6894417.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1112960
formatgeneral
languageEnglish
publisherIEEE
titleSystematic study of RTN in nanowire transistor and enhanced RTN by hot carrier injection and negative bias temperature instability
typeConference Paper
contenttypeMetadata Only
identifier padid8281946
subject keywordsAntenna radiation patterns
subject keywordsMetals
subject keywordsNumerical models
subject keywordsPatch antennas
subject keywordsStress
subject keywordsThermal stresses
subject keywordsCo-simulation Methodology
subject keywordsMulti-physical Effects
subject keywordsPatch Antenna
identifier doi10.1109/APCAP.2014.6992481
journal titleLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
filesize462833
citations0
contributor rawauthorOta, K. , Saitoh, M. , Tanaka, C. , Matsushita, D. , Numata, T.
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