A novel metallic complex reaction etching for transition metal and magnetic material by low-temperature and damage-free neutral beam process for non-volatile MRAM device applications
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سال
: 2014شناسه الکترونیک: 10.1109/SMC.2014.6974393
کلیدواژه(گان): Conferences,Cybernetics,Demand Response,cement plant,load shift,modeling and simulation
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آمار بازدید
A novel metallic complex reaction etching for transition metal and magnetic material by low-temperature and damage-free neutral beam process for non-volatile MRAM device applications
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contributor author | Xun Gu , Kikuchi, Y. , Nozawa, T. , Samukawa, S. | |
date accessioned | 2020-03-12T23:28:20Z | |
date available | 2020-03-12T23:28:20Z | |
date issued | 2014 | |
identifier other | 6894362.pdf | |
identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1112904 | |
format | general | |
language | English | |
publisher | IEEE | |
title | A novel metallic complex reaction etching for transition metal and magnetic material by low-temperature and damage-free neutral beam process for non-volatile MRAM device applications | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8281883 | |
subject keywords | Conferences | |
subject keywords | Cybernetics | |
subject keywords | Demand Response | |
subject keywords | cement plant | |
subject keywords | load shift | |
subject keywords | modeling and simulation | |
identifier doi | 10.1109/SMC.2014.6974393 | |
journal title | LSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on | |
filesize | 822156 | |
citations | 0 |