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Highly scalable bulk FinFET Devices with Multi-V<inf>T</inf> options by conductive metal gate stack tuning for the 10-nm node and beyond

date accessioned2020-03-12T23:28:20Z
date available2020-03-12T23:28:20Z
date issued2014
identifier other6894359.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1112901?show=full
formatgeneral
languageEnglish
publisherIEEE
titleHighly scalable bulk FinFET Devices with Multi-V<inf>T</inf> options by conductive metal gate stack tuning for the 10-nm node and beyond
typeConference Paper
contenttypeMetadata Only
identifier padid8281880
subject keywordsecology
subject keywordsradiative transfer
subject keywordsradiometry
subject keywordssolar radiation
subject keywordsvegetation
subject keywordsFPAR retrieval
subject keywordsMODIS apparent top-of-atmosphere reflectance
subject keywordsMODIS product
subject keywordsSAIL model homogenous canopy
subject keywordsTOA reflectance linear equation
subject keywordsabstracted photosynthetically active radiation fraction
subject keywordsatmosphere condition
subject keywordsatmosphere radiative transfer model simulated dataset
subject keywordscanopy radiative transfer model simulated dataset
subject keywordscanopy structure
subject keywordsdirect algorithm
subject keywordsecosystem productivity model
subject keywordsestimated FPAR product
subject keywordsforest canopy
identifier doi10.1109/IGARSS.2014.6947118
journal titleLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
filesize972768
citations0
contributor rawauthorRagnarsson, L.-A. , Chew, S.A. , Dekkers, H. , Luque, M.T. , Parvais, B. , De Keersgieter, A. , Devriendt, K. , Van Ammel, A. , Schram, T. , Yoshida, N. , Phatak, A. , Han, K. , Colombeau, B. , Brand, A. , Horiguchi, N. , Thean, A.V.-Y.


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