Estimations, convergences and comparisons on fuzzy integrals of Sugeno, Choquet and Gould type
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: 2014شناسه الکترونیک: 10.1109/ESSDERC.2014.6948816
کلیدواژه(گان): III-V semiconductors,MOSFET,Poisson equation,Schrodinger equation,indium compounds,semiconductor device models,Ha&,#x0308,nsch model,InAs,MOSFET subthreshold regime,Poisson-Schro&,#x0308,dinger simulations,bulk subthreshold swing classical model,double gate,double-gate devices,inversion charge,long-channel bulk device,quantum effects,quantum modulation,subtreshold regime,threshold voltage roll-off,Doping,Equations,MOSFET,Mathematical model,Silicon,Threshold voltage
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Estimations, convergences and comparisons on fuzzy integrals of Sugeno, Choquet and Gould type
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contributor author | Croitoru, A. , Mastorakis, N. | |
date accessioned | 2020-03-12T23:25:47Z | |
date available | 2020-03-12T23:25:47Z | |
date issued | 2014 | |
identifier other | 6891590.pdf | |
identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1111269 | |
format | general | |
language | English | |
publisher | IEEE | |
title | Estimations, convergences and comparisons on fuzzy integrals of Sugeno, Choquet and Gould type | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8280068 | |
subject keywords | III-V semiconductors | |
subject keywords | MOSFET | |
subject keywords | Poisson equation | |
subject keywords | Schrodinger equation | |
subject keywords | indium compounds | |
subject keywords | semiconductor device models | |
subject keywords | Ha& | |
subject keywords | #x0308 | |
subject keywords | nsch model | |
subject keywords | InAs | |
subject keywords | MOSFET subthreshold regime | |
subject keywords | Poisson-Schro& | |
subject keywords | #x0308 | |
subject keywords | dinger simulations | |
subject keywords | bulk subthreshold swing classical model | |
subject keywords | double gate | |
subject keywords | double-gate devices | |
subject keywords | inversion charge | |
subject keywords | long-channel bulk device | |
subject keywords | quantum effects | |
subject keywords | quantum modulation | |
subject keywords | subtreshold regime | |
subject keywords | threshold voltage roll-off | |
subject keywords | Doping | |
subject keywords | Equations | |
subject keywords | MOSFET | |
subject keywords | Mathematical model | |
subject keywords | Silicon | |
subject keywords | Threshold voltage | |
identifier doi | 10.1109/ESSDERC.2014.6948816 | |
journal title | uzzy Systems (FUZZ-IEEE), 2014 IEEE International Conference on | |
filesize | 599833 | |
citations | 0 |