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Parasitic BJT versus DIBL: Floating-body-related subthreshold characteristics of SOI NMOS device

contributor authorLung, D.H.
contributor authorHu, S.K.
contributor authorKuo, J.B.
contributor authorChen, D.
contributor authorChen, Y.J.
date accessioned2020-03-12T22:54:51Z
date available2020-03-12T22:54:51Z
date issued2014
identifier other7029443.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1098953?show=full
formatgeneral
languageEnglish
publisherIEEE
titleParasitic BJT versus DIBL: Floating-body-related subthreshold characteristics of SOI NMOS device
typeConference Paper
contenttypeMetadata Only
identifier padid8240377
subject keywordsCloud computing
subject keywordsn Data visualization
subject keywordsn Europe
subject keywordsn Geospatial analysis
subject keywordsn Spatial databases
subject keywordsn Three-dimensional displays
subject keywordsn Water resources
subject keywordsn Earth Science
subject keywordsn SaaS
subject keywordsn cloud computing
subject keywordsn spatial data
subject keywordsn web-mapping services
identifier doi10.1109/COM.Geo.2014.18
journal titlentegrated Circuits (ISIC), 2014 14th International Symposium on
filesize840548
citations0


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