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In depth characterization of hole transport in 14nm FD-SOI pMOS devices

contributor authorShin, M.
contributor authorShi, M.
contributor authorMouis, M.
contributor authorCros, A.
contributor authorJosse, E.
contributor authorKim, G.T.
contributor authorGhibaudo, G.
date accessioned2020-03-12T22:53:15Z
date available2020-03-12T22:53:15Z
date issued2014
identifier other7028215.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1098003?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIEEE
titleIn depth characterization of hole transport in 14nm FD-SOI pMOS devices
typeConference Paper
contenttypeMetadata Only
identifier padid8239018
subject keywordsCarbon dioxide
subject keywordsn Educational institutions
subject keywordsn Lead
subject keywordsn Monitoring
subject keywordsn Object recognition
subject keywordsn Pollution
subject keywordsn Standards
subject keywordsn Arduino
subject keywordsn Gas Sensor
subject keywordsn RFlD
subject keywordsn WS
subject keywordsn loT
identifier doi10.1109/ICRAIE.2014.6909157
journal titleOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
filesize800961
citations0


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