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Impact of doping concentration and temperature variation on the noise performance of separate gate InAlAs/InGaAs DG-HEMT

contributor authorParveen
contributor authorVerma, Neha
contributor authorJogi, Jyotika
date accessioned2020-03-12T22:45:05Z
date available2020-03-12T22:45:05Z
date issued2014
identifier other7022339.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1093291?show=full
formatgeneral
languageEnglish
publisherIEEE
titleImpact of doping concentration and temperature variation on the noise performance of separate gate InAlAs/InGaAs DG-HEMT
typeConference Paper
contenttypeMetadata Only
identifier padid8232678
subject keywordsdigital signatures
subject keywordsn digital signature
subject keywordsn evidence preservation methods
subject keywordsn hybrid signature scheme
subject keywordsn hysteresis signature scheme
subject keywordsn log data
subject keywordsn log signature scheme
subject keywordsn planned common number identification system
subject keywordsn united signature scheme
subject keywordsn Ciphers
subject keywordsn Digital signatures
subject keywordsn Hybrid power systems
subject keywordsn Hysteresis
subject keywordsn Length measurement
subject keywordsn Public key
subject keywordsn Time measurement
subject keywordsn Digital forensics
subject keywordsn Digital signature
subject keywordsn Evidence preservation
subject keywordsn Hybrid signature
subject keywordsn Hy
identifier doi10.1109/COMPSACW.2014.60
journal titleENCON 2014 - 2014 IEEE Region 10 Conference
filesize289167
citations0


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