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Challenges for InGaAs n-MOSFETs in the future generation sub-10nm CMOS logic devices

contributor authorMing-Fu Li
contributor authorShenwei Li
contributor authorDaming Huang
contributor authorYe, P.D.
date accessioned2020-03-12T22:43:52Z
date available2020-03-12T22:43:52Z
date issued2014
identifier other7021326.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1092643?show=full
formatgeneral
languageEnglish
publisherIEEE
titleChallenges for InGaAs n-MOSFETs in the future generation sub-10nm CMOS logic devices
typeConference Paper
contenttypeMetadata Only
identifier padid8231830
subject keywordsanisotropic media
subject keywordsn dielectric function
subject keywordsn dielectric polarisation
subject keywordsn electromagnetic metamaterials
subject keywordsn magnetic anisotropy
subject keywordsn magnetoelectric effects
subject keywordsn permittivity
subject keywordsn Floquet representation
subject keywordsn artificial magnetism
subject keywordsn bianisotropy
subject keywordsn closed-form expressions
subject keywordsn higher-order spatial dispersion effects
subject keywordsn local effective electromagnetic constitutive parameters
subject keywordsn local nondispersive permittivity
subject keywordsn magnetoelectric coupling parameters
subject keywordsn nonlocal spatially dispersive
identifier doi10.1109/EuCAP.2014.6902325
journal titleolid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
filesize2789797
citations0


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