A new signal combination for 3-channel duty-cycle division multiplexing technique
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سال
: 2014شناسه الکترونیک: 10.1109/ICIPRM.2014.6880563
کلیدواژه(گان): CMOS integrated circuits,n Ge-Si alloys,n III-V semiconductors,n MOSFET,n gallium arsenide,n indium compounds,n invertors,n nanoelectronics,n wafer bonding,n CMOS inverters,n InGaAs,n InGaAs n-FETs,n SiGe,n co-integrating high mobility channels,n co-planar nanoscaled SiGe p-FETs,n direct wafer bonding,n hybrid substrates,n n-channel field effect transistors,n p-channel field effect transistors,n stacked ultrathin high-mobility layers
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A new signal combination for 3-channel duty-cycle division multiplexing technique
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| contributor author | Seyedzadeh, Saleh | |
| contributor author | Mahdiraji, Ghafour Amouzad | |
| date accessioned | 2020-03-12T22:18:20Z | |
| date available | 2020-03-12T22:18:20Z | |
| date issued | 2014 | |
| identifier other | 7002299.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1078399 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A new signal combination for 3-channel duty-cycle division multiplexing technique | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8214692 | |
| subject keywords | CMOS integrated circuits | |
| subject keywords | n Ge-Si alloys | |
| subject keywords | n III-V semiconductors | |
| subject keywords | n MOSFET | |
| subject keywords | n gallium arsenide | |
| subject keywords | n indium compounds | |
| subject keywords | n invertors | |
| subject keywords | n nanoelectronics | |
| subject keywords | n wafer bonding | |
| subject keywords | n CMOS inverters | |
| subject keywords | n InGaAs | |
| subject keywords | n InGaAs n-FETs | |
| subject keywords | n SiGe | |
| subject keywords | n co-integrating high mobility channels | |
| subject keywords | n co-planar nanoscaled SiGe p-FETs | |
| subject keywords | n direct wafer bonding | |
| subject keywords | n hybrid substrates | |
| subject keywords | n n-channel field effect transistors | |
| subject keywords | n p-channel field effect transistors | |
| subject keywords | n stacked ultrathin high-mobility layers | |
| identifier doi | 10.1109/ICIPRM.2014.6880563 | |
| journal title | hotonics (ICP), 2014 IEEE 5th International Conference on | |
| filesize | 2801450 | |
| citations | 0 |