Modified CMA based blind equalization and carrier-phase recovery in PDM-QPSK coherent optical receivers
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سال
: 2014شناسه الکترونیک: 10.1109/ISTDM.2014.6874693
کلیدواژه(گان): III-V semiconductors,n elemental semiconductors,n gallium arsenide,n germanium,n semiconductor epitaxial layers,n semiconductor growth,n GaAs,n Ge,n Ge substrate,n Ge-GaAs,n device applications,n epilayer,n integration,n materials characteristics,n Decision support systems
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Modified CMA based blind equalization and carrier-phase recovery in PDM-QPSK coherent optical receivers
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| contributor author | Faruk, Md.Saifuddin | |
| date accessioned | 2020-03-12T22:12:04Z | |
| date available | 2020-03-12T22:12:04Z | |
| date issued | 2014 | |
| identifier other | 6997333.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1074816 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Modified CMA based blind equalization and carrier-phase recovery in PDM-QPSK coherent optical receivers | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8210958 | |
| subject keywords | III-V semiconductors | |
| subject keywords | n elemental semiconductors | |
| subject keywords | n gallium arsenide | |
| subject keywords | n germanium | |
| subject keywords | n semiconductor epitaxial layers | |
| subject keywords | n semiconductor growth | |
| subject keywords | n GaAs | |
| subject keywords | n Ge | |
| subject keywords | n Ge substrate | |
| subject keywords | n Ge-GaAs | |
| subject keywords | n device applications | |
| subject keywords | n epilayer | |
| subject keywords | n integration | |
| subject keywords | n materials characteristics | |
| subject keywords | n Decision support systems | |
| identifier doi | 10.1109/ISTDM.2014.6874693 | |
| journal title | omputer and Information Technology (ICCIT), 2013 16th International Conference on | |
| filesize | 730600 | |
| citations | 0 |