A new background updating model for motion detection considering future frame
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سال
: 2014شناسه الکترونیک: 10.1109/ISTDM.2014.6874656
کلیدواژه(گان): MOSFET,n elemental semiconductors,n germanium,n molecular beam epitaxial growth,n semiconductor epitaxial layers,n semiconductor growth,n semiconductor heterojunctions,n thin film transistors,n Fe<,sub>,3<,/sub>,Si,n Ge,n MBE,n atomically controlled heteroepitaxy,n epitaxial layers,n ferromagnetic Heusler alloy,n molecular beam epitaxy,n vertical-type Ge-channel spin transistor,n Atomic layer deposition,n Epitaxial growth,n Iron
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A new background updating model for motion detection considering future frame
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| contributor author | Rahaman, Arifur | |
| contributor author | Hasan, Md.Mehedi | |
| contributor author | Ahmed, Riaz | |
| contributor author | Maswood, Mirza Md.Shahriar | |
| contributor author | Rahman, Md.Mostafizur | |
| date accessioned | 2020-03-12T22:12:00Z | |
| date available | 2020-03-12T22:12:00Z | |
| date issued | 2014 | |
| identifier other | 6997296.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1074777 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A new background updating model for motion detection considering future frame | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8210917 | |
| subject keywords | MOSFET | |
| subject keywords | n elemental semiconductors | |
| subject keywords | n germanium | |
| subject keywords | n molecular beam epitaxial growth | |
| subject keywords | n semiconductor epitaxial layers | |
| subject keywords | n semiconductor growth | |
| subject keywords | n semiconductor heterojunctions | |
| subject keywords | n thin film transistors | |
| subject keywords | n Fe< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | Si | |
| subject keywords | n Ge | |
| subject keywords | n MBE | |
| subject keywords | n atomically controlled heteroepitaxy | |
| subject keywords | n epitaxial layers | |
| subject keywords | n ferromagnetic Heusler alloy | |
| subject keywords | n molecular beam epitaxy | |
| subject keywords | n vertical-type Ge-channel spin transistor | |
| subject keywords | n Atomic layer deposition | |
| subject keywords | n Epitaxial growth | |
| subject keywords | n Iron | |
| identifier doi | 10.1109/ISTDM.2014.6874656 | |
| journal title | omputer and Information Technology (ICCIT), 2013 16th International Conference on | |
| filesize | 1341555 | |
| citations | 1 |