Soft biometrics for subject identification using clothing attributes
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Year
: 2014DOI: 10.1109/DRC.2014.6872378
Keyword(s): III-V semiconductors,n MOSFET,n gallium arsenide,n indium compounds,n tunnelling,n BTBT,n DIBL,n III-V FETs,n In<,sub>,0.53<,/sub>,Ga<,sub>,0.47<,/sub>,As,n N+ source-drain,n SS,n band-to-band tunneling,n channel material,n channel-drain junction,n depletion region,n drain-induced barrier lowering,n electron transport properties,n high drain-field region,n narrow bandgap,n off-state leakage,n on-state characteristics
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Soft biometrics for subject identification using clothing attributes
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| contributor author | Jaha, Emad Sami | |
| contributor author | Nixon, Mark S. | |
| date accessioned | 2020-03-12T22:09:59Z | |
| date available | 2020-03-12T22:09:59Z | |
| date issued | 2014 | |
| identifier other | 6996278.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1073761 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Soft biometrics for subject identification using clothing attributes | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8209885 | |
| subject keywords | III-V semiconductors | |
| subject keywords | n MOSFET | |
| subject keywords | n gallium arsenide | |
| subject keywords | n indium compounds | |
| subject keywords | n tunnelling | |
| subject keywords | n BTBT | |
| subject keywords | n DIBL | |
| subject keywords | n III-V FETs | |
| subject keywords | n In< | |
| subject keywords | sub> | |
| subject keywords | 0.53< | |
| subject keywords | /sub> | |
| subject keywords | Ga< | |
| subject keywords | sub> | |
| subject keywords | 0.47< | |
| subject keywords | /sub> | |
| subject keywords | As | |
| subject keywords | n N+ source-drain | |
| subject keywords | n SS | |
| subject keywords | n band-to-band tunneling | |
| subject keywords | n channel material | |
| subject keywords | n channel-drain junction | |
| subject keywords | n depletion region | |
| subject keywords | n drain-induced barrier lowering | |
| subject keywords | n electron transport properties | |
| subject keywords | n high drain-field region | |
| subject keywords | n narrow bandgap | |
| subject keywords | n off-state leakage | |
| subject keywords | n on-state characteristics | |
| identifier doi | 10.1109/DRC.2014.6872378 | |
| journal title | iometrics (IJCB), 2014 IEEE International Joint Conference on | |
| filesize | 745738 | |
| citations | 0 |