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A coarse-to-fine approach to robust 3D facial landmarking via curvature analysis and Active Normal Model

contributor authorJia Sun
contributor authorHuang, Di
contributor authorYunhong Wang
contributor authorChen, Liming
date accessioned2020-03-12T22:09:57Z
date available2020-03-12T22:09:57Z
date issued2014
identifier other6996267.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1073747?show=full
formatgeneral
languageEnglish
publisherIEEE
titleA coarse-to-fine approach to robust 3D facial landmarking via curvature analysis and Active Normal Model
typeConference Paper
contenttypeMetadata Only
identifier padid8209871
subject keywordsSchottky barriers
subject keywordsn aluminium compounds
subject keywordsn field effect transistors
subject keywordsn hole mobility
subject keywordsn Al<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsO<
subject keywordssub>
subject keywords3<
subject keywords/sub>
subject keywordsn ambipolar phosphorene field-effect transistors
subject keywordsn dielectric capping
subject keywordsn effective Schottky barrier height
subject keywordsn hole field-effect mobility
subject keywordsn on-off ratio
subject keywordsn top dielectric capping
subject keywordsn transistor polarity
subject keywordsn well-behaved back-gate few-layer phosphorene transistor
subject keywordsn Aluminum oxide
subject keywordsn Charge carrier processes
subject keywordsn Dielectrics
identifier doi10.1109/DRC.2014.6872367
journal titleiometrics (IJCB), 2014 IEEE International Joint Conference on
filesize9869960
citations0


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