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Application of enhanced dual-channel line differential protection in China Southern Grid

contributor authorYu Jiang
contributor authorZhou Hongyang
contributor authorLiu Qiankuan
date accessioned2020-03-12T22:04:39Z
date available2020-03-12T22:04:39Z
date issued2014
identifier other6991852.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1070484?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleApplication of enhanced dual-channel line differential protection in China Southern Grid
typeConference Paper
contenttypeMetadata Only
identifier padid8206546
subject keywordsII-VI semiconductors
subject keywordsn aluminium
subject keywordsn annealing
subject keywordsn atomic layer deposition
subject keywordsn crystallography
subject keywordsn thin film transistors
subject keywordsn wide band gap semiconductors
subject keywordsn zinc compounds
subject keywordsn TFT
subject keywordsn ZnO:Al
subject keywordsn atomic layer deposition
subject keywordsn carrier concentration parameter
subject keywordsn crystal orientation
subject keywordsn crystallographic nature
subject keywordsn electrical conductivity
subject keywordsn midannealing process
subject keywordsn optimization
subject keywordsn patterning process
subject keywordsn sound transfer characteristics
subject keywordsn temperature 150 degC
subject keywordsn temperature 2
identifier doi10.1109/AM-FPD.2014.6867141
journal titlelectricity Distribution (CICED), 2014 China International Conference on
filesize868383
citations0


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