Design of Europeana Cloud technical infrastructure
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: 2014شناسه الکترونیک: 10.1109/IWJT.2014.6842048
کلیدواژه(گان): Fermi level,n MOSFET,n carrier density,n germanium,n ion implantation,n laser beam annealing,n ohmic contacts,n p-n junctions,n rapid thermal annealing,n silicon compounds,n ytterbium compounds,n Fermi level pinning,n Ge,n RTA,n SiO<,sub>,2<,/sub>,-Si,n YbGe<,sub>,2-x<,/sub>,-Ge,n carrier density,n fast impurity diffusion,n high mobility CMOS,n high mobility nMOSFET,n ion implantation,n junction ideality factor,n l
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Design of Europeana Cloud technical infrastructure
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| contributor author | Kats, Pavel | |
| contributor author | Mielnicki, Marcin | |
| contributor author | Knoth, Petr | |
| contributor author | Muhr, Markus | |
| contributor author | Mamakis, Georgios | |
| contributor author | Werla, Marcin | |
| date accessioned | 2020-03-12T22:00:11Z | |
| date available | 2020-03-12T22:00:11Z | |
| date issued | 2014 | |
| identifier other | 6970240.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1068010 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Design of Europeana Cloud technical infrastructure | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8202950 | |
| subject keywords | Fermi level | |
| subject keywords | n MOSFET | |
| subject keywords | n carrier density | |
| subject keywords | n germanium | |
| subject keywords | n ion implantation | |
| subject keywords | n laser beam annealing | |
| subject keywords | n ohmic contacts | |
| subject keywords | n p-n junctions | |
| subject keywords | n rapid thermal annealing | |
| subject keywords | n silicon compounds | |
| subject keywords | n ytterbium compounds | |
| subject keywords | n Fermi level pinning | |
| subject keywords | n Ge | |
| subject keywords | n RTA | |
| subject keywords | n SiO< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | -Si | |
| subject keywords | n YbGe< | |
| subject keywords | sub> | |
| subject keywords | 2-x< | |
| subject keywords | /sub> | |
| subject keywords | -Ge | |
| subject keywords | n carrier density | |
| subject keywords | n fast impurity diffusion | |
| subject keywords | n high mobility CMOS | |
| subject keywords | n high mobility nMOSFET | |
| subject keywords | n ion implantation | |
| subject keywords | n junction ideality factor | |
| subject keywords | n l | |
| identifier doi | 10.1109/IWJT.2014.6842048 | |
| journal title | igital Libraries (JCDL), 2014 IEEE/ACM Joint Conference on | |
| filesize | 148527 | |
| citations | 0 |