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Photoluminescence of AlGaAs/InGaAs/GaAs phemt heterostructures with donor-acceptor doping of barriers

contributor authorGulyaev, D.V.
contributor authorZhuravlev, K.S.
contributor authorBakarov, A.K.
contributor authorToropov, A.I.
date accessioned2020-03-12T21:49:14Z
date available2020-03-12T21:49:14Z
date issued2014
identifier other6959578.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1061632?show=full
formatgeneral
languageEnglish
publisherIEEE
titlePhotoluminescence of AlGaAs/InGaAs/GaAs phemt heterostructures with donor-acceptor doping of barriers
typeConference Paper
contenttypeMetadata Only
identifier padid8193424
subject keywordsSchottky diode mixers
subject keywordsn harmonics suppression
subject keywordsn microwave mixers
subject keywordsn ultra wideband technology
subject keywordsn IMD
subject keywordsn Spice parameters
subject keywordsn beam lead Schottky diode
subject keywordsn double balanced diode ring mixer
subject keywordsn frequency 250 GHz
subject keywordsn frequency 3.35 GHz
subject keywordsn harmonic suppression
subject keywordsn intermodulation products
subject keywordsn loss 5.022 dB
subject keywordsn superhetrodyne receivers
subject keywordsn ultra wideband system
subject keywordsn Educational institutions
subject keywordsn Gain
subject keywordsn Mixers
subject keywordsn RF signals
subject keywordsn Radio frequency
subject keywordsn Schottky diodes
subject keywordsn Conve
identifier doi10.1109/CSNT.2014.219
journal titleicrowave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conferenc
filesize320262
citations0


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