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A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs

contributor authorFlorentin, M.
contributor authorMillan, J.
contributor authorGodignon, P.
contributor authorAlexandru, M.
contributor authorConstant, A.
contributor authorSchmidt, B.
date accessioned2020-03-12T21:35:59Z
date available2020-03-12T21:35:59Z
date issued2014
identifier other6948780.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1054105?show=full
formatgeneral
languageEnglish
publisherIEEE
titleA positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs
typeConference Paper
contenttypeMetadata Only
identifier padid8184615
subject keywordsInternet
subject keywordsn data analysis
subject keywordsn data mining
subject keywordsn data visualisation
subject keywordsn electronic commerce
subject keywordsn grammars
subject keywordsn natural language processing
subject keywordsn social networking (online)
subject keywordsn text analysis
subject keywordsn World Wide Web
subject keywordsn comprehensive feedback
subject keywordsn comprehensive sentimental data analysis
subject keywordsn customer experience
subject keywordsn data processing
subject keywordsn debate
subject keywordsn e-commerce Websites
subject keywordsn forums
subject keywordsn government
subject keywordsn grammar rules
subject keywordsn graphical visualization
subject keywordsn natural language rules
subject keywordsn opinion data gathering
identifier doi10.1109/IAdCC.2014.6779394
journal titleolid State Device Research Conference (ESSDERC), 2014 44th European
filesize2737914
citations1


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