Temperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes
ناشر:
سال
: 2014شناسه الکترونیک: 10.1109/PSCC.2014.7038329
کلیدواژه(گان): Covariance matrices,Current measurement,Estimation,Noise,Phasor measurement units,Technological innovation,Voltage measurement
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آمار بازدید
Temperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes
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| contributor author | Novo, C. | |
| contributor author | Giacomini, R. | |
| contributor author | Doria, R.T. | |
| contributor author | Afzalian, A. | |
| contributor author | Flandre, D. | |
| date accessioned | 2020-03-12T21:23:36Z | |
| date available | 2020-03-12T21:23:36Z | |
| date issued | 2014 | |
| identifier other | 6940097.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1047513 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Temperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8176665 | |
| subject keywords | Covariance matrices | |
| subject keywords | Current measurement | |
| subject keywords | Estimation | |
| subject keywords | Noise | |
| subject keywords | Phasor measurement units | |
| subject keywords | Technological innovation | |
| subject keywords | Voltage measurement | |
| identifier doi | 10.1109/PSCC.2014.7038329 | |
| journal title | icroelectronics Technology and Devices (SBMicro), 2014 29th Symposium on | |
| filesize | 2089783 | |
| citations | 0 |