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0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture

contributor authorShuto, Y.
contributor authorYamamoto, S.
contributor authorSugahara, S.
date accessioned2020-03-12T21:15:35Z
date available2020-03-12T21:15:35Z
date issued2014
identifier other6931624.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1042582?show=full
formatgeneral
languageEnglish
publisherIEEE
title0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture
typeConference Paper
contenttypeMetadata Only
identifier padid8170315
subject keywordsAbstracts
subject keywordsAttitude control
subject keywordsAzimuth
subject keywordsGold
subject keywordsIrrigation
subject keywordsTransmission line measurements
subject keywordsIntelligent control
subject keywordsPID control
subject keywordsSOCM
subject keywordsTRMS
identifier doi10.1109/ICMLC.2014.7009725
journal titleimulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
filesize760637
citations0


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