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RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit”

contributor authorBhattacharjee, A.
contributor authorLenka, T.R.
date accessioned2020-03-12T21:08:07Z
date available2020-03-12T21:08:07Z
date issued2014
identifier other6926151.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1038190?show=full
formatgeneral
languageEnglish
publisherIEEE
titleRF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit”
typeConference Paper
contenttypeMetadata Only
identifier padid8164698
subject keywordsClustering algorithms
subject keywordsDelays
subject keywordsDistributed databases
subject keywordsPrefetching
subject keywordsScheduling
subject keywordsScheduling algorithms
subject keywordsMapReduce
subject keywordsdata locality
subject keywordsjob scheduling
identifier doi10.1109/FSKD.2014.6980924
journal titleevices, Circuits and Systems (ICDCS), 2014 2nd International Conference on
filesize375438
citations0


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