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Epitaxial growth of GaInAsP system on wafer-bonded InP/Si substrate

date accessioned2020-03-12T20:43:41Z
date available2020-03-12T20:43:41Z
date issued2014
identifier other6886160.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1023314?show=full
formatgeneral
languageEnglish
publisherIEEE
titleEpitaxial growth of GaInAsP system on wafer-bonded InP/Si substrate
typeConference Paper
contenttypeMetadata Only
identifier padid8148136
subject keywordscomputer science education
subject keywordsinformation systems
subject keywordsknowledge management
subject keywordsproject management
subject keywordsteaching
subject keywordsIS project management unit
subject keywordsPBL
subject keywordsinformation systems students
subject keywordsknowledge modules
subject keywordsproblem based learning
subject keywordsteaching effect
subject keywordsComputers
subject keywordsEducation
subject keywordsProject management
subject keywordsIS Project Management
subject keywordsPBL approach
subject keywordsteaching effect
identifier doi10.1109/ICCSE.2014.6926462
journal titleow Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
filesize222876
citations0
contributor rawauthorMatsumoto, K. , Kanaya, Y. , Kishikawa, J. , Shimomura, K.


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