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Composition profiles in InP/InAsP quantum well structures under the effect of reactives gases during dry etching processes — Luminescence and SIMS

date accessioned2020-03-12T20:37:47Z
date available2020-03-12T20:37:47Z
date issued2014
identifier other6880554.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1020126?show=full
formatgeneral
languageEnglish
publisherIEEE
titleComposition profiles in InP/InAsP quantum well structures under the effect of reactives gases during dry etching processes — Luminescence and SIMS
typeConference Paper
contenttypeMetadata Only
identifier padid8144566
subject keywordsDiseases
subject keywordsGuidelines
subject keywordsHospitals
subject keywordsKidney
subject keywordsMedical diagnostic imaging
subject keywordsSociology
subject keywordsStatistics
subject keywordschronic kidney disease
subject keywordsdisease management
subject keywordsdisease registration system
identifier doi10.1109/BIBM.2014.6999361
journal titlendium Phosphide and Related Materials (IPRM), 26th International Conference on
filesize374760
citations0
contributor rawauthorLandesman, J.-P. , Jimenez, J. , Hortelano, V. , Leger, Y. , Folliot, H. , Delhaye, T. , Torres, A. , Rhallabi, A.


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