Design of high-rate irregular non-binary LDPC codes using algorithmic stopping-set cancellation
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سال
: 2014شناسه الکترونیک: 10.1109/PVSC.2014.6925291
کلیدواژه(گان): aluminium,chemical vapour deposition,equivalent circuits,silicon compounds,spectroscopy,AC measurements,Al-SiC-Si-Al,PECVD,PV parameters,Rutherford backscattering spectroscopy,current-voltage measurements,dark conditions,elastic recoil detection,electronic behavior,equivalent AC circuit,heterojunction structure,impedance spectra,negative capacitance-resistance,p-type silicon substrate,structural analysis,Capacitance,Current measurement,Heterojunctions,Silicon,Silicon carb
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Design of high-rate irregular non-binary LDPC codes using algorithmic stopping-set cancellation
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| date accessioned | 2020-03-12T20:30:50Z | |
| date available | 2020-03-12T20:30:50Z | |
| date issued | 2014 | |
| identifier other | 6874925.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1017023 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Design of high-rate irregular non-binary LDPC codes using algorithmic stopping-set cancellation | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8141000 | |
| subject keywords | aluminium | |
| subject keywords | chemical vapour deposition | |
| subject keywords | equivalent circuits | |
| subject keywords | silicon compounds | |
| subject keywords | spectroscopy | |
| subject keywords | AC measurements | |
| subject keywords | Al-SiC-Si-Al | |
| subject keywords | PECVD | |
| subject keywords | PV parameters | |
| subject keywords | Rutherford backscattering spectroscopy | |
| subject keywords | current-voltage measurements | |
| subject keywords | dark conditions | |
| subject keywords | elastic recoil detection | |
| subject keywords | electronic behavior | |
| subject keywords | equivalent AC circuit | |
| subject keywords | heterojunction structure | |
| subject keywords | impedance spectra | |
| subject keywords | negative capacitance-resistance | |
| subject keywords | p-type silicon substrate | |
| subject keywords | structural analysis | |
| subject keywords | Capacitance | |
| subject keywords | Current measurement | |
| subject keywords | Heterojunctions | |
| subject keywords | Silicon | |
| subject keywords | Silicon carb | |
| identifier doi | 10.1109/PVSC.2014.6925291 | |
| journal title | nformation Theory (ISIT), 2014 IEEE International Symposium on | |
| filesize | 468565 | |
| citations | 0 | |
| contributor rawauthor | Ranganathan, S.V.S. , Divsalar, D. , Vakilinia, K. , Wesel, R.D. |