Investigation of switching mechanism in forming-free multi-level resistive memories with atomic layer deposited HfTiO<inf>x</inf> nanolaminate

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سال
: 2014
شناسه الکترونیک: 10.1109/ICCSP.2014.6950154
کلیدواژه(گان): CMOS integrated circuits,code convertors,integrated circuit design,low-power electronics,thermometers,CADENCE analog environment,MTCMOS design,SOI technology,average power consumption reduction,dynamic IR drop voltage reduction,high-threshold voltage transistor,inrush current reduction,leakage current,low-power consumption,low-power high-performance MTCMOS design,low-threshold voltage transistor,power switches,propagation delay reduction,standby leakage power,supply voltage,s
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