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Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications

date accessioned2020-03-12T20:16:58Z
date available2020-03-12T20:16:58Z
date issued2014
identifier other6861112.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1008744?show=full
formatgeneral
languageEnglish
publisherIEEE
titleCurrent collapse in GaN heterojunction field effect transistors for high-voltage switching applications
typeConference Paper
contenttypeMetadata Only
identifier padid8130670
subject keywordsAlgorithm design and analysis
subject keywordsConferences
subject keywordsDynamic range
subject keywordsImaging
subject keywordsMultimedia communication
subject keywordsProbabilistic logic
subject keywordsVisualization
subject keywordsHigh Dynamic Range (HDR)
subject keywordsclustering
subject keywordscontent selection
identifier doi10.1109/QoMEX.2014.6982279
journal titleeliability Physics Symposium, 2014 IEEE International
filesize415771
citations0
contributor rawauthorJoh, J. , Tipirneni, N. , Pendharkar, S. , Krishnan, S.


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