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Efficiency improvement of Doherty power amplifiers using supply switching and gate bias modulation

contributor authorModi, S.S. , Yanduru, N. , Balsara, P.
date accessioned2020-03-12T20:13:00Z
date available2020-03-12T20:13:00Z
date issued2014
identifier other6857774.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1006219?show=full
formatgeneral
languageEnglish
publisherIEEE
titleEfficiency improvement of Doherty power amplifiers using supply switching and gate bias modulation
typeConference Paper
contenttypeMetadata Only
identifier padid8127737
subject keywordsIII-V semiconductors
subject keywordselemental semiconductors
subject keywordsgallium arsenide
subject keywordsindium compounds
subject keywordssilicon
subject keywordssolar cells
subject keywordsInGaP-GaAs-Si
subject keywordsactive bottom cell
subject keywordsbuffer architecture
subject keywordsbuffer doping
subject keywordsconcentrated photovoltaics
subject keywordsmultijunction solar cells
subject keywordsoptimal down selection
subject keywordsphoton flux penetration
subject keywordsthreading dislocation density
subject keywordstriple junction solar cells
subject keywordsDecision support systems
subject keywordsGallium arsenide
subject keywordsJunctions
subject keywordsPhotovoltaic systems
subject keywordsSilicon
subject keywordsIII&
subject keywords#x2013
subject keywordsV-on-Si
subject keywordsheteroepitaxy
subject keywordssolar cell design
identifier doi10.1109/PVSC.2014.6925120
journal titleireless and Microwave Technology Conference (WAMICON), 2014 IEEE 15th Annual
filesize323918
citations0


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