12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications
| date accessioned | 2020-03-12T20:03:15Z | |
| date available | 2020-03-12T20:03:15Z | |
| date issued | 2014 | |
| identifier other | 6848347.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1000068?show=full | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | 12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8120559 | |
| subject keywords | Algorithm design and analysis | |
| subject keywords | Educational institutions | |
| subject keywords | Genetic algorithms | |
| subject keywords | Search problems | |
| subject keywords | Sociology | |
| subject keywords | Statistics | |
| subject keywords | Very large scale integration | |
| identifier doi | 10.1109/EWDTS.2014.7027084 | |
| journal title | icrowave Symposium (IMS), 2014 IEEE MTT-S International | |
| filesize | 787861 | |
| citations | 0 | |
| contributor rawauthor | Piotrowicz, S. , Jardel, O. , Chartier, E. , Aubry, R. , Baczkowski, L. , Casbon, M. , Dua, C. , Escotte, L. , Gamarra, P. , Jacquet, J.C. , Michel, N. , Nsele, S.D. , Oualli, M. , Patard, O. , Potier, C. , Di-Forte Poisson, M.A. , Delage, S.L. |
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