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نمایش تعداد 1-8 از 8

Quantum Key Distribution Protocol Using Quantum Fourier Transform

نوع: Journal Paper

نویسنده : Xiaoqing Tan; Siting Cheng; Jin Li; Zhihong Feng

سال: 2015

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Impact of peald AlN interfacial passivation layer on thin barrier AlGaN/GaN HEMTs

نوع: Conference Paper

نویسنده : Xin Tan; Yuanjie Lv; Shaobo Dun; Guodong Gu; Zhihong Feng

ناشر: IEEE

سال: 2014

Influence of substrate on the RF-related electric characteristics for W-band AlGaN/GaN HEMTs

نوع: Conference Paper

نویسنده : Yuanjie Lv; Zhihong Feng; Xin Tan; Xubo Song; Guodong Gu

ناشر: IEEE

سال: 2014

Realization of GaN-based high frequency planar schottky barrier diodes through air-bridge technology

نوع: Conference Paper

نویسنده : Shixiong Liang; Yulong Fang; Dong Xing; Junlong Wang; Lisen Zhang; Dabao Yang; Xiongwen Zhang; Zhihong Feng

ناشر: IEEE

سال: 2014

Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

نوع: Conference Paper

نویسنده : Xingye Zhou; Zhihong Feng; Yuangang Wang; Guodong Gu; Xubo Song; Shujun Cai

ناشر: IEEE

سال: 2014

70 nm gate-length THz InP-based In<inf>0.7</inf>Ga<inf>0.3</inf>As/In<inf>0.52</inf>Al<inf>0.48</inf>As HEMT with f<inf>max</inf> of 540GHz

نوع: Conference Paper

نویسنده : Lisen Zhang; Zhihong Feng; Dong Xing; Shixiong Liang; Junlong Wang; Guodong Gu; Yuangang Wang; Peng Xu

ناشر: IEEE

سال: 2014

Activities of antioxidant enzymes in three bacteria exposed to bensulfuron-methyl

نوع: Journal Paper

نویسنده : Xiaoyan Lin; Xiaohong Xu; Chinghong Yang; Yuhua Zhao; Zhihong Feng; Yangyang Dong

سال: 2009

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AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure

نوع: Journal Paper

نویسنده : Yulong Fang; Zhihong Feng; Jiayun Yin; Xingye Zhou; Yuangang Wang; Guodong Gu; Xubo Song; Yuanjie Lv; Chengming Li; Shujun Cai

ناشر: IEEE

سال: 2014

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Quantum Key Distribution Protocol Using Quantum Fourier Transform

Impact of peald AlN interfacial passivation layer on thin barrier AlGaN/GaN HEMTs

Influence of substrate on the RF-related electric characteristics for W-band AlGaN/GaN HEMTs

Realization of GaN-based high frequency planar schottky barrier diodes through air-bridge technology

Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

70 nm gate-length THz InP-based In<inf>0.7</inf>Ga<inf>0.3</inf>As/In<inf>0.52</inf>Al<inf>0.48</inf>As HEMT with f<inf>max</inf> of 540GHz

Activities of antioxidant enzymes in three bacteria exposed to bensulfuron-methyl

AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure

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Quantum Key Distribution Protocol Using Quantum Fourier Transform

Impact of peald AlN interfacial passivation layer on thin barrier AlGaN/GaN HEMTs

Influence of substrate on the RF-related electric characteristics for W-band AlGaN/GaN HEMTs

Realization of GaN-based high frequency planar schottky barrier diodes through air-bridge technology

Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

70 nm gate-length THz InP-based In<inf>0.7</inf>Ga<inf>0.3</inf>As/In<inf>0.52</inf>Al<inf>0.48</inf>As HEMT with f<inf>max</inf> of 540GHz

Activities of antioxidant enzymes in three bacteria exposed to bensulfuron-methyl

AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure