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نمایش تعداد 1-5 از 5

Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors

نوع: Journal Paper

نویسنده : Ya-Hsiang Tai; Chun-Yi Chang; Chung-Lun Hsieh; Yung-Hsuan Yang; Wei-Kuang Chao; Huan-Ean Chen

ناشر: IEEE

سال: 2014

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

نوع: Journal Paper

نویسنده : Geng-Wei Chang; Ting-Chang Chang; Jhe-Ciou Jhu; Tsung-Ming Tsai; Kuan-Chang Chang; Yong-En Syu; Ya-Hsiang Tai; Fu-Yen Jian; Ya-Chi Hung

ناشر: IEEE

سال: 2014

Ultrahigh Sensitivity Self-Amplification Phototransistor Achieved by Automatic Energy Band Lowering Behavior

نوع: Journal Paper

نویسنده : Hua-Mao Chen; Ting-Chang Chang; Ya-Hsiang Tai; Yu-Chun Chen; Man-Chun Yang; Cheng-Hsu Chou; Jung-Fang Chang; Shao-Zhi Deng

ناشر: IEEE

سال: 2014

On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure

نوع: Journal Paper

نویسنده : Ching-En Chen; Ting-Chang Chang; Hua-Mao Chen; Bo You; Kai-Hsiang Yang; Szu-Han Ho; Jyun-Yu Tsai; Kuan-Ju Liu; Ying-Hsin Lu; Yu-Ju Hung; Ya-Hsiang Tai; Tseung-Yuen Tseng

ناشر: IEEE

سال: 2014

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

نوع: Journal Paper

نویسنده : Kuan-Chang Chang; Rui Zhang; Ting-Chang Chang; Tsung-Ming Tsai; J. C. Lou; Jung-Hui Chen; Tai-Fa Young; Min-Chen Chen; Ya-Liang Yang; Yin-Chih Pan; Geng-Wei Chang; Tian-Jian Chu; Chih-Cheng Shih; Jian-Yu Chen; Chih-Hung Pan; Yu-Ting Su; Yong-En Syu; Ya-Hsiang Tai; Simon M. Sze

سال: 2013

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Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Ultrahigh Sensitivity Self-Amplification Phototransistor Achieved by Automatic Energy Band Lowering Behavior

On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

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Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Ultrahigh Sensitivity Self-Amplification Phototransistor Achieved by Automatic Energy Band Lowering Behavior

On the Origin of Anomalous Off&#x2013;Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure