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نویسنده : Jandhyala, Srikar; Mordi, Greg; Lee, Bongki; Lee, Geunsik; Floresca, Carlo; Cha, Pil-Ryung; Ahn, Jinho; Wallace, Robert M.; Chabal, Yves J.; Kim, Moon J.

سال: 2012

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Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon

نوع: Journal Paper

نویسنده : Zhang, Li Li; Zhao, Xin; Ji, Hengxing; Stoller, Meryl D.; Lai, Linfei; Murali, Shanthi; Mcdonnell, Stephen; Cleveger, Brandon; Wallace, Robert M.; Ruoff, Rodney S.

سال: 2012

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Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors

نوع: Journal Paper

نویسنده : Saungeun Park; Sangchul Lee; Mordi, G.; Jandhyala, Srivatsava; Min-Woo Ha; Jang-Sik Lee; Colombo, Luigi; Wallace, Robert M.; Byoung Hun Lee; Jiyoung Kim

ناشر: IEEE

سال: 2014

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In-situ characterization of 2D materials for beyond CMOS applications

High-Îº Dielectric Materials for Microelectronics

Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfOr ₂r Interfaces

Metal–Graphene–Metal Sandwich Contacts for Enhanced Interface Bonding and Work Function Control

Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone

Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon

Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors

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In-situ characterization of 2D materials for beyond CMOS applications

High-Îº Dielectric Materials for Microelectronics

Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfOr 2r Interfaces

Metal–Graphene–Metal Sandwich Contacts for Enhanced Interface Bonding and Work Function Control

Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone

Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon

Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors

Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfOr ₂r Interfaces