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Packaging a <formula formulatype="inline"> <img src="/images/tex/473.gif" alt="W"> </formula>-Band Integrated Module With an Optimized Flip-Chip Interconnect on an Organic Substrate

Type: Journal Paper

Author : Khan, Wasif T.; Lopez, Aida L. Vera; Ulusoy, /A/. Cagri; Papapolymerou, John

Publisher: IEEE

Year: 2014

A 94 GHz, 1.4 dB Insertion Loss Single-Pole Double-Throw Switch Using Reverse-Saturated SiGe HBTs

Type: Journal Paper

Author : Schmid, Robert L.; Ulusoy, /A/. Cagri; Song, Peter; Cressler, John D.

Publisher: IEEE

Year: 2014

An ultra-wideband, hybrid, distributed power amplifier using flip-chip bonded GaN devices on AlN substrate

Type: Conference Paper

Author : Ulusoy, A.Cagri; Barisich, Christopher; Pavlidis, Spyridon; Khan, Wasif T.; Papapolymerou, John

Publisher: IEEE

Year: 2014

On the Analysis and Design of Low-Loss Single-Pole Double-Throw W-Band Switches Utilizing Saturated SiGe HBTs

Type: Journal Paper

Author : Schmid, Robert L.; Song, Peter; Coen, Christopher T.; Ulusoy, /A/. Cagri; Cressler, John D.

Publisher: IEEE

Year: 2014

A Low-Loss and High Isolation D-Band SPDT Switch Utilizing Deep-Saturated SiGe HBTs

Type: Journal Paper

Author : Ulusoy, /A/. Cagri; Song, Peter; Schmid, Robert L.; Khan, Wasif T.; Kaynak, Mehmet; Tillack, Bernd; Papapolymerou, John; Cressler, John D.

Publisher: IEEE

Year: 2014

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Packaging a <formula formulatype="inline"> <img src="/images/tex/473.gif" alt="W"> </formula>-Band Integrated Module With an Optimized Flip-Chip Interconnect on an Organic Substrate

A 94 GHz, 1.4 dB Insertion Loss Single-Pole Double-Throw Switch Using Reverse-Saturated SiGe HBTs

An ultra-wideband, hybrid, distributed power amplifier using flip-chip bonded GaN devices on AlN substrate

On the Analysis and Design of Low-Loss Single-Pole Double-Throw W-Band Switches Utilizing Saturated SiGe HBTs

A Low-Loss and High Isolation D-Band SPDT Switch Utilizing Deep-Saturated SiGe HBTs

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Packaging a <formula formulatype="inline"> <img src="/images/tex/473.gif" alt="W"> </formula>-Band Integrated Module With an Optimized Flip-Chip Interconnect on an Organic Substrate

A 94 GHz, 1.4 dB Insertion Loss Single-Pole Double-Throw Switch Using Reverse-Saturated SiGe HBTs

An ultra-wideband, hybrid, distributed power amplifier using flip-chip bonded GaN devices on AlN substrate

On the Analysis and Design of Low-Loss Single-Pole Double-Throw W-Band Switches Utilizing Saturated SiGe HBTs

A Low-Loss and High Isolation D-Band SPDT Switch Utilizing Deep-Saturated SiGe HBTs