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Atomically controlled processing for nitrogen doping of group IV semiconductors

Type: Conference Paper

Author : Murota, Junichi; Sakuraba, Masao; Tillack, Bernd

Publisher: IEEE

Year: 2014

A 0.8 THz <formula formulatype="inline"> <img src="/images/tex/18926.gif" alt="f_{\\rm MAX}"> </formula> SiGe HBT Operating at 4.3 K

Type: Journal Paper

Author : Chakraborty, Partha S.; Cardoso, Adilson S.; Wier, Brian R.; Omprakash, Anup P.; Cressler, John D.; Kaynak, Mehmet; Tillack, Bernd

Publisher: IEEE

Year: 2014

SiGe process integrated full-360° microelectromechanical systems-based active phase shifter for W-band automotive radar

Type: Journal Paper

Author : Ö ztü rk, Efe; Nemati, M.H.; Kaynak, Mehmet; Tillack, Bernd; Tekin, Ibrahim

Publisher: IET

Year: 2014

A Low-Loss and High Isolation D-Band SPDT Switch Utilizing Deep-Saturated SiGe HBTs

Type: Journal Paper

Author : Ulusoy, /A/. Cagri; Song, Peter; Schmid, Robert L.; Khan, Wasif T.; Kaynak, Mehmet; Tillack, Bernd; Papapolymerou, John; Cressler, John D.

Publisher: IEEE

Year: 2014

A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology

Type: Journal Paper

Author : Hossain, M.; Kraemer, T.; Ostermay, Ina; Jensen, T.; Janke, B.; Borokhovych, Y.; Lisker, M.; Glisic, Savo; Elkhouly, Mohamed; Borngraeber, J.; Tillack, Bernd; Meliani, Chafik; Krueger, O.; Krozer, V.; Heinrich, Wolfgang

Publisher: IEEE

Year: 2014

On the Transient Response of a Complementary (npn <formula formulatype="inline"> <img src="/images/tex/515.gif" alt="+"> </formula> pnp) SiGe HBT BiCMOS Technology

Type: Journal Paper

Author : Lourenco, Nelson E.; Fleetwood, Zachary E.; Seungwoo Jung; Cardoso, Adilson S.; Chakraborty, Partha S.; England, Troy D.; Roche, Nicholas J.-H; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Melinger, Joseph S.; Warner, Jeffrey H.; Paki, Pauline; Kaynak, Mehmet; Tillack, Bernd; Knoll, D.; Cressler, John D.

Publisher: IEEE

Year: 2014

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Atomically controlled processing for nitrogen doping of group IV semiconductors

A 0.8 THz <formula formulatype="inline"> <img src="/images/tex/18926.gif" alt="f_{\\rm MAX}"> </formula> SiGe HBT Operating at 4.3 K

SiGe process integrated full-360° microelectromechanical systems-based active phase shifter for W-band automotive radar

A Low-Loss and High Isolation D-Band SPDT Switch Utilizing Deep-Saturated SiGe HBTs

A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology

On the Transient Response of a Complementary (npn <formula formulatype="inline"> <img src="/images/tex/515.gif" alt="+"> </formula> pnp) SiGe HBT BiCMOS Technology

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Atomically controlled processing for nitrogen doping of group IV semiconductors

A 0.8 THz <formula formulatype="inline"> <img src="/images/tex/18926.gif" alt="f_{\\rm MAX}"> </formula> SiGe HBT Operating at 4.3 K

SiGe process integrated full-360&#x000B0; microelectromechanical systems-based active phase shifter for W-band automotive radar

A Low-Loss and High Isolation D-Band SPDT Switch Utilizing Deep-Saturated SiGe HBTs

A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology

On the Transient Response of a Complementary (npn <formula formulatype="inline"> <img src="/images/tex/515.gif" alt="+"> </formula> pnp) SiGe HBT BiCMOS Technology

SiGe process integrated full-360° microelectromechanical systems-based active phase shifter for W-band automotive radar