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نمایش تعداد 1-10 از 15

Improvement in negative-bias-illumination-stress stability of fully-transparent double-gate a-IGZO thin-film transistors

نوع: Conference Paper

نویسنده : Da-Bin Jeon , Sung-Min Yoon

ناشر: IEEE

سال: 2014

Nonvolatile memory performances of transparent and/or flexible memory thin-film transistors using IGZO channel and ZnO charge-trap layers

نوع: Journal Paper

نویسنده : So-Jung Kim; Won-Ho Lee; Sung-Min Yoon

سال: 2015

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Impacts of an Al<inf>2</inf>O<inf>3</inf> capping layer for the fully-patterned top-gate oxide thin-film transistors using solution-processed PVP/Al-Zn-Sn-O gate-stack structure

نوع: Conference Paper

نویسنده : Kyeong-Ah Kim , Jun-Yong Bak , Sung-Min Yoon

ناشر: IEEE

سال: 2014

Analysis of impact factors affecting on the stack effect in high-rise building

نوع: Journal Paper

نویسنده : Jin-Hwan Oh; Doo-Sam Song; Sung-Min Yoon; Yujin Nam

سال: 2016

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A study for the dynamic system of coupled cable-driven structure in surgical robot instrument

نوع: Conference Paper

نویسنده : Chi Yen Kim; Min Cheol Lee; Sung Min Yoon; Byeong Ho Kang

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Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

نوع: Journal Paper

نویسنده : Jun Yong Bak; Min-Ki Ryu; Sang Hee Ko Park; Chi Sun Hwang; Sung Min Yoon

ناشر: IEEE

سال: 2014

Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

نوع: Journal Paper

نویسنده : Jun Yong Bak; Min-Ki Ryu; Sang Hee Ko Park; Chi-Sun Hwang; Sung Min Yoon

ناشر: IEEE

سال: 2014

High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

نوع: Journal Paper

نویسنده : Kwang H. Lee; Gyubaek Lee; Kimoon Lee; Min Suk Oh; Seongil Im; Sung-Min Yoon

سال: 2009

Treatment characteristic of 1,4-dioxane by ozone-based advanced oxidation processes

نوع: Journal Paper

نویسنده : Soon Chul Kwon; Joo Yeon Kim; Sung Min Yoon; Wisup Bae; Kyung Seok Kang; Young Woo Rhee

سال: 2012

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Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures

نوع: Journal Paper

نویسنده : Jun Yong Bak; Shinhyuk Yang; Ho-Jun Ryu; Sang Hee Ko Park; Chi Sun Hwang; Sung Min Yoon

ناشر: IEEE

سال: 2014

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Improvement in negative-bias-illumination-stress stability of fully-transparent double-gate a-IGZO thin-film transistors

Nonvolatile memory performances of transparent and/or flexible memory thin-film transistors using IGZO channel and ZnO charge-trap layers

Impacts of an Al<inf>2</inf>O<inf>3</inf> capping layer for the fully-patterned top-gate oxide thin-film transistors using solution-processed PVP/Al-Zn-Sn-O gate-stack structure

Analysis of impact factors affecting on the stack effect in high-rise building

A study for the dynamic system of coupled cable-driven structure in surgical robot instrument

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

Treatment characteristic of 1,4-dioxane by ozone-based advanced oxidation processes

Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures

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Improvement in negative-bias-illumination-stress stability of fully-transparent double-gate a-IGZO thin-film transistors

Nonvolatile memory performances of transparent and/or flexible memory thin-film transistors using IGZO channel and ZnO charge-trap layers

Impacts of an Al<inf>2</inf>O<inf>3</inf> capping layer for the fully-patterned top-gate oxide thin-film transistors using solution-processed PVP/Al-Zn-Sn-O gate-stack structure

Analysis of impact factors affecting on the stack effect in high-rise building

A study for the dynamic system of coupled cable-driven structure in surgical robot instrument

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In&#x2013;Ga&#x2013;Zn-O Active Channel and ZnO Charge-Trap Layer

Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

Treatment characteristic of 1,4-dioxane by ozone-based advanced oxidation processes

Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In&#x2013;Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures