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N-polar GaNâ AlGaNâ GaN high electron mobility transistors

Type: Journal Paper

Author : Rajan, Siddharth; Chini, Alessandro; Wong, Man Hoi; Speck, James S.; Mishra, Umesh K.

Year: 2007

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Prospects for LED lighting

Type: Journal Paper

Author : Pimputkar, Siddha; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji

Year: 2009

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Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

Type: Journal Paper

Author : Kaun, Stephen W.; Burke, Peter G.; Hoi Wong, Man; Kyle, Erin C. H.; Mishra, Umesh K.; Speck, James S.

Year: 2012

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Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes

Type: Journal Paper

Author : Hardy, M.T.; Feng Wu; Chia-Yen Huang; Yuji Zhao; Feezell, Daniel F.; Nakamura, Shigenari; Speck, James S.; DenBaars, Steven P.

Publisher: IEEE

Year: 2014

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Type: Journal Paper

Author : Jin Chen; En Xia Zhang; Cher Xuan Zhang; McCurdy, Michael W.; Fleetwood, D.M.; Schrimpf, R.D.; Kaun, Stephen W.; Kyle, Erin C. H.; Speck, James S.

Publisher: IEEE

Year: 2014

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N-polar GaNâ AlGaNâ GaN high electron mobility transistors

Prospects for LED lighting

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

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N-polar GaNâ AlGaNâ GaN high electron mobility transistors

Prospects for LED lighting

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs