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Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

Type: Journal Paper

Author : Yi An Yin; Naiyin Wang; Guanghan Fan; Shuti Li

Publisher: IEEE

Year: 2014

Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer

Type: Journal Paper

Author : Chao Liu; Zhiwei Ren; Xin Chen; Bijun Zhao; Xingfu Wang; Yian Yin; Shuti Li

Publisher: IEEE

Year: 2014

Reduced Droop Effect in Nitride Light Emitting Diodes With Taper-Shaped Electron Blocking Layer

Type: Journal Paper

Author : Chao Liu; Zhiwei Ren; Xin Chen; Bijun Zhao; Xingfu Wang; Shuti Li

Publisher: IEEE

Year: 2014

Author

Shuti Li (3)

Bijun Zhao (2)

Chao Liu (2)

Xin Chen (2)

Xingfu Wang (2)

Zhiwei Ren (2)

Guanghan Fan (1)

Naiyin Wang (1)

Yi An Yin (1)

Yian Yin (1)

Publisher

IEEE (3)

Year

2014 (3)

Keywords

gallium compounds (3)

III-V semiconductors (3)

light emitting diodes (3)

aluminium compounds (2)

Aluminum gallium nitride (2)

Charge carrier processes (2)

efficiency droop (2)

Gallium nitride (2)

hole injection (2)

indium compounds (2)

Type

Journal Paper (3)

Language (ISO)

English (3)

Content Type

Metadata Only (3)

Publication Title

Photonics Technology Letters, IEEE (2)

Electron Devices, IEEE Transactions on (1)

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