Search

Now showing items 1-3 of 3

Metal–Oxide RRAM

Type: Journal Paper

Author : Wong, H.-S.P.; Heng-Yuan Lee; Shimeng Yu; Yu-Sheng Chen; Yi Wu; Pang-Shiu Chen; Byoungil Lee; Chen, F.T.; Ming-Jinn Tsai

Year: 2012

Request PDF

Novel Defects-Trapping <formula formulatype="inline"> <img src="/images/tex/21375.gif" alt="{\\rm TaO}_{\\rm X}/{\\rm HfO}_{\\rm X}"> </formula> RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

Type: Journal Paper

Author : Yu-Sheng Chen; Heng-Yuan Lee; Pang-Shiu Chen; Wei-Su Chen; Kan-Hsueh Tsai; Pei-Yi Gu; Tai-Yuan Wu; Chen-Han Tsai; Rahaman, S.Z.; Yu-De Lin; Chen, Fan; Ming-Jinn Tsai; Tzu-Kun Ku

Publisher: IEEE

Year: 2014

A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application

Type: Journal Paper

Author : Shyh-Shyuan Sheu; Chia-Chen Kuo; Meng-Fan Chang; Pei-Ling Tseng; Lin Chih-Sheng; Min-Chuan Wang; Chih-He Lin; Wen-Pin Lin; Tsai-Kan Chien; Sih-Han Lee; Szu-Chieh Liu; Heng-Yuan Lee; Pang-Shiu Chen; Yu-Sheng Chen; Ching-Chih Hsu; Frederick T. Chen; Keng-Li Su; Tzu-Kun Ku; Ming-Jinn Tsai; Ming-Jer Kao

Year: 2013

Request PDF

Search

Metal–Oxide RRAM

Novel Defects-Trapping <formula formulatype="inline"> <img src="/images/tex/21375.gif" alt="{\\rm TaO}_{\\rm X}/{\\rm HfO}_{\\rm X}"> </formula> RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application

Author

Publisher

Year

Keywords

Type

Language (ISO)

Content Type

Publication Title

Search

Filters

Metal–Oxide RRAM

Novel Defects-Trapping <formula formulatype="inline"> <img src="/images/tex/21375.gif" alt="{\\rm TaO}_{\\rm X}/{\\rm HfO}_{\\rm X}"> </formula> RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application