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Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling

Type: Conference Paper

Author : Bonyadi, R.; Alatise, O.; Jahdi, S.; Hu, J.; Evans, L.; Mawby, P.A.

Publisher: IEEE

Year: 2014

Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

Type: Journal Paper

Author : Alexakis, Petros; Alatise, Olayiwola; Ji Hu; Jahdi, Saeed; Li Ran; Mawby, P.A.

Publisher: IEEE

Year: 2014

Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C

Type: Journal Paper

Author : Thomas, Stephen M.; Sharma, Yogesh K.; Crouch, M.A.; Fisher, Craig /A/.; Perez-Tomas, Amador; Jennings, Michael R.; Mawby, P.A.

Publisher: IEEE

Year: 2014

Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process

Type: Journal Paper

Author : Fisher, Craig /A/.; Jennings, Michael R.; Sharma, Yogesh K.; Hamilton, Dean P.; Gammon, P.M.; Perez-Tomas, Amador; Thomas, Stephen M.; Burrows, Susan E.; Mawby, P.A.

Publisher: IEEE

Year: 2014

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Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling

Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C

Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process

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Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling

Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500&#x00B0;C

Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process

Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C