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نمایش تعداد 1-6 از 6

Time resolved EBIC study of InAlN/GaN HFETs

نوع: Conference Paper

نویسنده : Satka, A.; Priesol, J.; Bernat, M.; Donoval, D.; Kovac, J.; Allsopp, D.W.E.; Kuzmik, J.

ناشر: IEEE

سال: 2014

Material and electrical properties of N-polar (GaN)/InN surfaces

نوع: Conference Paper

نویسنده : Cico, K.; Adikimenakis, A.; Micusik, M.; Hascik, S.; Georgakilas, A.; Kuzmik, J.

ناشر: IEEE

سال: 2014

Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications

نوع: Conference Paper

نویسنده : Tapajna, M.; Valik, L.; Kotara, P.; Zhytnytska, R.; Brunner, F.; Hilt, O.; Bahat-Treidel, E.; Wurfl, J.; Kuzmik, J.

ناشر: IEEE

سال: 2014

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

نوع: Journal Paper

نویسنده : Tapajna, M.; Killat, N.; Palankovski, Vassil; Gregusova, D.; Cico, K.; Carlin, Jean-Francois; Grandjean, Nicolas; Kuball, M.; Kuzmik, J.

ناشر: IEEE

سال: 2014

Different polarities of InN (0001) heterostructures on Si (111) substrates

نوع: Conference Paper

نویسنده : Bairamis, A.I.; Adikimenakis, A.; Aijagunna, A.O.; Kehagias, Th.; Dimitrakopulos, G.P.; Kioseoglou, J.; Komninou, Ph.; Zervos, Ch.; Kuzmik, J.; Georgakilas, A.

ناشر: IEEE

سال: 2014

Self-Heating in GaN Transistors Designed for High-Power Operation

نوع: Journal Paper

نویسنده : Kuzmik, J.; Tapajna, M.; Valik, L.; Molnar, Miklos; Donoval, Daniel; Fleury, Clement; Pogany, Dionyz; Strasser, G.; Hilt, O.; Brunner, Frank; Wurfl, Joachim

ناشر: IEEE

سال: 2014

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Time resolved EBIC study of InAlN/GaN HFETs

Material and electrical properties of N-polar (GaN)/InN surfaces

Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Different polarities of InN (0001) heterostructures on Si (111) substrates

Self-Heating in GaN Transistors Designed for High-Power Operation

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Time resolved EBIC study of InAlN/GaN HFETs

Material and electrical properties of N-polar (GaN)/InN surfaces

Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Different polarities of InN (0001) heterostructures on Si (111) substrates

Self-Heating in GaN Transistors Designed for High-Power Operation