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In depth characterization of hole transport in 14nm FD-SOI pMOS devices

Type: Conference Paper

Author : Shin, M.; Shi, M.; Mouis, M.; Cros, A.; Josse, E.; Kim, G.T.; Ghibaudo, G.

Publisher: IEEE

Year: 2014

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs

Type: Conference Paper

Author : Andrieu, F.; Casse, M.; Baylac, E.; Perreau, P.; Nier, O.; Rideau, D.; Berthelon, R.; Pourchon, F.; Pofelski, A.; De Salvo, B.; Gallon, C.; Mazzocchi, V.; Barge, D.; Gaumer, C.; Gourhant, O.; Cros, A.; Barral, V.; Ranica, R.; Planes, N.; Schwarzenbach, W.; Richard, E.; Josse, E.; Weber, O.; Arnaud, F.; Vinet, M.; Faynot, O.; Haond, M.

Publisher: IEEE

Year: 2014

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In depth characterization of hole transport in 14nm FD-SOI pMOS devices

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs

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In depth characterization of hole transport in 14nm FD-SOI pMOS devices

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs