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نمایش تعداد 1-4 از 4

Device Size-Dependent Improved Resistive Switching Memory Performance

نوع: Journal Paper

نویسنده : Prakash, Aravind; Maikap, S.; Wei-Su Chen; Heng-Yuan Lee; Chen, Fan; Ta-Chang Tien; Chao-Sung Lai; Ming-Jinn Tsai

ناشر: IEEE

سال: 2014

Metal–Oxide RRAM

نوع: Journal Paper

نویسنده : Wong, H.-S.P.; Heng-Yuan Lee; Shimeng Yu; Yu-Sheng Chen; Yi Wu; Pang-Shiu Chen; Byoungil Lee; Chen, F.T.; Ming-Jinn Tsai

سال: 2012

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Novel Defects-Trapping <formula formulatype="inline"> <img src="/images/tex/21375.gif" alt="{\\rm TaO}_{\\rm X}/{\\rm HfO}_{\\rm X}"> </formula> RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

نوع: Journal Paper

نویسنده : Yu-Sheng Chen; Heng-Yuan Lee; Pang-Shiu Chen; Wei-Su Chen; Kan-Hsueh Tsai; Pei-Yi Gu; Tai-Yuan Wu; Chen-Han Tsai; Rahaman, S.Z.; Yu-De Lin; Chen, Fan; Ming-Jinn Tsai; Tzu-Kun Ku

ناشر: IEEE

سال: 2014

A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application

نوع: Journal Paper

نویسنده : Shyh-Shyuan Sheu; Chia-Chen Kuo; Meng-Fan Chang; Pei-Ling Tseng; Lin Chih-Sheng; Min-Chuan Wang; Chih-He Lin; Wen-Pin Lin; Tsai-Kan Chien; Sih-Han Lee; Szu-Chieh Liu; Heng-Yuan Lee; Pang-Shiu Chen; Yu-Sheng Chen; Ching-Chih Hsu; Frederick T. Chen; Keng-Li Su; Tzu-Kun Ku; Ming-Jinn Tsai; Ming-Jer Kao

سال: 2013

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Device Size-Dependent Improved Resistive Switching Memory Performance

Metal–Oxide RRAM

Novel Defects-Trapping <formula formulatype="inline"> <img src="/images/tex/21375.gif" alt="{\\rm TaO}_{\\rm X}/{\\rm HfO}_{\\rm X}"> </formula> RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application

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Device Size-Dependent Improved Resistive Switching Memory Performance

Metal–Oxide RRAM

Novel Defects-Trapping <formula formulatype="inline"> <img src="/images/tex/21375.gif" alt="{\\rm TaO}_{\\rm X}/{\\rm HfO}_{\\rm X}"> </formula> RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application